CM75RL-12NF Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
150
VGE =
20V
15
Tj = 25°C
13
12
100
11
50
10
89
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 75A
IC = 150A
2
IC = 30A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
10¹
Cies
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–1
10^–1 2 3 5 7 10⁰ 2 3
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
MITSUBISHI IGBT MODULES
CM75RL-12NF
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4
VGE = 15V
3
2
1
Tj = 25°C
Tj = 125°C
0
0
50
100
150
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
Tj = 25°C
Tj = 125°C
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
td(off)
3
tf
2
10²
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₀
td(on)
tr
2 3 5 7 10¹
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.3Ω
Tj = 125°C
Inductive load
2 3 5 7 10²
COLLECTOR CURRENT IC (A)
Jun. 2004