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CM75RL-12NF Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 102°C*1
Pulse
Pulse
TC = 25°C
Conditions
MITSUBISHI IGBT MODULES
CM75RL-12NF
HIGH POWER SWITCHING USE
Ratings
Unit
600
V
±20
V
75
A
(Note 2)
150
A
75
A
(Note 2)
150
A
430
W
BRAKE PART
Symbol
VCES
VGES
IC
ICM
PC (Note 3)
VRRM
IFM
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, TC = 107°C*1
Pulse
TC = 25°C
Clamp diode part
Clamp diode part
Conditions
Ratings
Unit
600
V
±20
V
50
A
(Note 2)
100
A
320
W
600
V
50
A
(COMMON RATING)
Symbol
Tj
Tstg
Viso
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Conditions
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Ratings
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Unit
°C
°C
V
N•m
N•m
g
Jun. 2004