CM75RL-12NF Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM75RL-12NF
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
Max. ^Unit
—
—
1
mA
VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V
6
7
8
V
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat) Collector-emitter saturation voltage IC = 75A, VGE = 15V
Tj = 25°C
Tj = 125°C
—
1.7
2.2
—
1.7
—
V
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
11.3 nF
—
—
1.4
nF
—
—
0.45 nF
QG
Total gate charge
VCC = 300V, IC = 75A, VGE = 15V
—
300
—
nC
td(on)
Turn-on delay time
—
—
120
ns
tr
Turn-on rise time
VCC = 300V, IC = 75A
—
—
100
ns
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
—
300
ns
tf
Turn-off fall time
RG = 8.3Ω, Inductive load switching operation
—
—
300
ns
trr (Note 1) Reverse recovery time
IE = 75A
—
—
100
ns
Qrr (Note 1) Reverse recovery charge
—
1.2
—
µC
VEC(Note 1) Emitter-collector voltage
IE = 75A, VGE = 0V
—
—
2.8
V
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
IGBT part (1/6 module)^*1
FWDi part (1/6 module)^*1
—
—
0.29 °C/W
—
—
0.51 °C/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compound Applied (1/6 module)^*2
—
0.085
— °C/W
RG
External gate resistance
8.3
—
83
Ω
BRAKE PART
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 5.0mA
6
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
Tj = 25°C
—
VCE(sat) Collector-emitter saturation voltage IC = 50A, VGE = 15V
Tj = 125°C
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 300V, IC = 50A, VGE = 15V
—
VFM
Forward voltage drop
IF = 50A
—
Rth(j-c)Q _{Thermal resistance}
IGBT part^*1
—
Rth(j-c)R
Clamp diode part^*1
—
RG
External gate resistance
13
*^{1 : Tc measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Limits
Typ.
—
7
—
1.7
1.7
—
—
—
200
—
—
—
—
Max.
1
8
0.5
2.2
—
7.5
1.0
0.3
—
2.8
0.39
0.70
130
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
Ω
Jun. 2004