CM50RL-24NF_09 Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7 ^Conditions:
5 ^{VCC = 600V}
VGE = ±15V
3 RG = 6.3Ω
2 ^{Tj = 25°C}
Inductive load
10²
7
5
Irr
3
trr
2
10¹
10⁰
2 3 5 7 10¹ 2 3 5 7 10²
EMITTER CURRENT IE (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
10¹
7
Esw(off)
5
3
Esw(on)
2
10⁰
7 ^Conditions:
VCC = 600V
5 _{VGE = ±15V}
3 ^{RG = 6.3Ω}
2
Tj = 125°C
Inductive load
C snubber at bus
10^–1
10⁰ 2 3 5 7 10¹
23
5 7 10²
COLLECTOR CURRENT IC (A)
RECOVERY LOSS vs. IE
(TYPICAL)
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
10⁰
Err
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.3Ω
Tj = 125°C
Inductive load
C snubber at bus
2 3 5 7 10¹ 2 3 5 7 10²
EMITTER CURRENT IE (A)
5
MITSUBISHI IGBT MODULES
CM50RL-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10⁰
7
Single Pulse,
5
TC = 25°C
3
Under the chip
2
10^–1
7
5
3
2
IGBT part:
10^–2 _{Per unit base =}
7
5
Rth(j–c) = 0.32K/W
FWDi part:
3
2
Per unit base =
Rth(j–c) = 0.43K/W
10^–3
10^–1
7
5
3
2
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
10²
Conditions:
7 _{VCC = 600V}
5 _{VGE = ±15V}
3 ^{IC = 50A}
Tj = 125°C
2 _{Inductive load}
C snubber at bus
10¹
7
5
Esw(off)
3
2
Esw(on)
101⁰ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
10²
7
Conditions:
VCC = 600V
5
VGE = ±15V
3
IE = 50A
2
Tj = 125°C
Inductive load
C snubber at bus
10¹
7
5
Err
3
2
101⁰ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
Feb. 2009