CM50RL-24NF_09 Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGE =
20V
80
15
Tj = 25°C
13
12
60
40
11
20
10
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 100A
IC = 50A
2
IC = 20A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
10¹
7
Cies
5
3
2
10⁰
7
5
Coes
3
2
10^–1
7
5
3
2 _{VGE = 0V}
10^–₁²_{0–1 2 3 5 7 100 2 3}
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
4
MITSUBISHI IGBT MODULES
CM50RL-24NF
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4
VGE = 15V
3
2
1
Tj = 25°C
Tj = 125°C
0
0
20 40 60 80 100
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
Tj = 25°C
Tj = 125°C
10⁰
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
Conditions:
10¹ _{VCC = 600V}
7
5
VGE = ±15V
3 ^{RG = 6.3Ω}
2 ^{Tj = 125°C}
Inductive load
10⁰
10⁰ 2 3 5 7 10¹
23
tf
td(off)
td(on)
tr
5 7 10²
COLLECTOR CURRENT IC (A)
Feb. 2009