CM50RL-24NF_09 Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 94°C^*1
Pulse
Pulse
TC = 25°C
Conditions
MITSUBISHI IGBT MODULES
CM50RL-24NF
HIGH POWER SWITCHING USE
Ratings
Unit
1200
V
±20
V
50
A
(Note 2)
100
A
50
A
(Note 2)
100
A
390
W
BRAKE PART
Symbol
VCES
VGES
IC
ICM
PC (Note 3)
VRRM
IFM
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, TC = 104°C^*1
Pulse
TC = 25°C
Clamp diode part
Clamp diode part
Conditions
Ratings
Unit
1200
V
±20
V
30
A
(Note 2)
60
A
290
W
1200
V
30
A
(COMMON RATING)
Symbol
Tj
Tstg
Viso
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Conditions
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Ratings
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Unit
°C
°C
Vrms
N•m
N•m
g
Feb. 2009
2