CM50RL-24NF_09 Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM50RL-24NF
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 5.0mA, VCE = 10V
6
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
Tj = 25°C
—
VCE(sat) Collector-emitter saturation voltage IC = 50A, VGE = 15V
Tj = 125°C
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 600V, IC = 50A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 600V, IC = 50A
—
td(off)
Turn-off delay time
VGE = ±15V
—
tf
Turn-off fall time
RG = 6.3Ω, Inductive load
—
trr (Note 1) Reverse recovery time
IE = 50A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 50A, VGE = 0V
—
Rth(j-c)Q
IGBT part (1/6 module)^*1
—
Thermal resistance
Rth(j-c)R
FWDi part (1/6 module)^*1
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, Thermal compound Applied (1/6 module)^*2
—
RG
External gate resistance
6.3
Limits
Typ.
—
7
—
2.1
2.4
—
—
—
250
—
—
—
—
—
2
—
—
—
0.085
—
Max. ^Unit
1
mA
8
V
0.5
µA
3.0
—
V
8.5
nF
0.75 nF
0.17 nF
—
nC
100
ns
50
ns
300
ns
350
ns
100
ns
—
µC
3.8
V
0.32 K/W
0.43 K/W
—
K/W
96
Ω
BRAKE PART
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
—
—
VGE(th) Gate-emitter threshold voltage IC = 3.0mA
6
7
IGES
VCE(sat)
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
External gate resistance
±VGE = VGES, VCE = 0V
IC = 30A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 600V, IC = 30A, VGE = 15V
IF = 30A
IGBT part^*1
Clamp diode part^*1
—
—
—
2.1
—
2.4
—
—
—
—
—
—
—
150
—
—
—
—
—
—
10
—
*^{1 : Case temperature (Tc) measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Max.
1
8
0.5
3.0
—
5.1
0.45
0.10
—
3.8
0.43
0.65
100
Unit
mA
V
µA
V
nF
nF
nF
nC
V
K/W
K/W
Ω
Feb. 2009
3