CM1500HC-66R Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
Cies
2
10²
7
5
3
2
10¹
7
5
3
2 ^{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Coes
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
8
VCC = 1800V, VGE = ±15V
7 ^{RG(on) = 1.6Ω, RG(off) = 5.6Ω}
LS = 100nH, Tj = 125°C
Inductive load
Eon
6
5
4
Eoff
3
2
Erec
1
0
0 500 1000 1500 2000 2500 3000
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 1800V, IC = 1500A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
5
10
15
20
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
8
VCC = 1800V, VGE = ±15V
7 ^{RG(on) = 1.6Ω, RG(off) = 5.6Ω}
Eon
LS = 100nH, Tj = 150°C
Inductive load
6
5
4
Eoff
3
2
Erec
1
0
0 500 1000 1500 2000 2500 3000
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
Mar. 2009