CM1500HC-66R Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
3000
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 150°C
2500
VGE = 19V
2000
VGE = 15V
VGE = 13V
VGE = 11V
1500
3000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = VGE
2500
2000
1500
1000
500
VGE = 9V
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
1000
500
0
0
Tj = 25°C
Tj = 150°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
3000
VGE = 15V
2500
2000
1500
1000
500
Tj = 25°C
Tj = 125°C
Tj = 150°C
0
0
1
2
3
4
5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
3000
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
2500
2000
1500
1000
500
0
0
Tj = 25°C
Tj = 125°C
Tj = 150°C
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
Mar. 2009