CM1500HC-66R Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = –40…+150°C
VGE = 0V, Tj = –50°C
3300
V
3200
VGES
IC
ICM
Gate-emitter voltage
Collector current
VCE = 0V, Tj = 25°C
DC, Tc = 95°C
Pulse
± 20
V
1500
A
(Note 1)
3000
A
IE
Emitter current
(Note 2) ^DC
IEM
Pulse
1500
A
(Note 1)
3000
A
Pc
Maximum power dissipation(Note 3) Tc = 25°C, IGBT part
15600
W
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
6000
V
Ve
Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Tj
Junction temperature
2600
V
–50 ~ +150
°C
Top
Operating temperature
–50 ~ +150
°C
Tstg
Storage temperature
–55 ~ +150
°C
tpsc
Maximum short circuit pulse width VCC =2500V, VCE ≤ VCES, VGE =15V, Tj =150°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 150 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 1800 V, IC = 1500 A, VGE = ±15 V
Tj = 25°C
Tj = 125°C
Tj = 150°C
VCE(sat)
Collector-emitter saturation
voltage
IC = 1500 A
VGE = 15 V
td(on)
Turn-on delay time
(Note 4)
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
tr
Eon(10%)
Eon
Turn-on rise time
Turn-on switching energy
(Note 5)
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
RG(on) = 1.6Ω
Ls = 100 nH
Inductive load
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time
tf
Eoff(10%)
Eoff
Turn-off fall time
Turn-off switching energy
(Note 5)
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
RG(off) = 5.6Ω
Ls = 100 nH
Inductive load
Turn-off switching energy
(Note 6)
Emitter-collector voltage
IE = 1500 A
VEC
(Note 2) VGE = 0 V
(Note 4)
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Limits
Min
Typ
Unit
Max
—
—
6.0
—
6.0
—
mA
—
36.0
—
5.7
6.2
6.7
V
–0.5
—
0.5
µA
—
210.0
—
nF
—
13.0
—
nF
—
6.0
—
nF
—
16.0
—
µC
—
2.45
—
—
3.10
3.70
V
—
3.25
—
—
1.00
—
—
0.95 1.25 µs
—
0.95 1.25
—
0.28
—
—
0.30 0.50 µs
—
0.30 0.50
—
2.45
—
—
2.90
—
J/P
—
3.10
—
—
2.70
—
—
3.30
—
J/P
—
3.60
—
—
2.70
—
—
2.80 3.30 µs
—
2.85 3.30
—
0.30
—
—
0.35 1.00 µs
—
0.40 1.00
—
2.00
—
—
2.45
—
J/P
—
2.50
—
—
2.20
—
—
2.70
—
J/P
—
2.80
—
—
2.15
—
—
2.30
2.80
V
—
2.25
—
Mar. 2009
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