CM1500HC-66R Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1500HC-66R
● IC ............................................................... 1500 A
● VCES ....................................................... 3300V
● 1-element in a Pack
● Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
29.5
±0.5
57
±0.25
190
±0.5
57
±0.25
57
±0.25
6-M8 NUTS
6
4
>PET+PBT<
C
5
E
G
>PET+PBT<
3-M4 NUTS
SCREWING DEPTH
MIN 7.7
41.25
±0.3
79.4
±0.3
61.5
±0.3
3
20.25
±0.3
13
±0.3
61.5
±0.3
2
C
1
6 (C)
4 (C)
2 (C)
G
E
8-φ7 MOUNTING HOLES
5 (E)
3 (E)
1 (E)
CIRCUIT DIAGRAM
SCREWING DEPTH
MIN 16.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
Mar. 2009