BCR3PM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
10² _{VOLTAGE WAVEFORM}
7
t
5
4
(dv/dt)C
VD
3
2
CURRENT WAVEFORM
IT
(di/dt)C
τ
t
10¹
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
7
5
4
3
MINIMUM
2 CHARAC-
TERISTICS
10^{0 VALUE}
10⁰ 2 3 4 5 7 10¹
I QUADRANT
III QUADRANT
2 3 4 5 7 10²
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
7
TYPICAL EXAMPLE
5
IRGT III
4
3
IRGT I
2
IFGT I
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Feb.1999