BCR3PM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE CHARACTERISTICS
10²
7
5
3
2
PGM = 3W
10¹
7
5
3 VGT
2
PG(AV) = 0.3W
IGM =
0.5A
10⁰
7
5
3
IRGT I
2
10^–1
IFGT I, IRGT III VGD = 0.2V
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
5.0
4.5
4.0
360°
3.5 CONDUCTION
3.0 ^RESISTIVE,
INDUCTIVE
2.5 _LOADS
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
IRGT III
3
2
10²
IFGT I, IRGT I
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
120
110
100 ^{CURVES APPLY}
REGARDLESS
90 OF CONDUCTION ANGLE
80
70
60 ^360°
CONDUCTION
50 _RESISTIVE,
40 ^INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999