BCR3PM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ^{ALUMINUM AND GREASED}
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
NATURAL CONVECTION
60
CURVES APPLY
REGARDLESS
40
OF CONDUCTION ANGLE
RESISTIVE,
20
INDUCTIVE
LOADS
0
012345678
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
DISTRIBUTION
T2⁺, G^–
3
2
10²
7
5
3
2
10¹
7
5
3
2
TT_,,,,,,,,,22^+–,,_,,,,,,,,,GG^+– _,,,,,,,,, TEY_{,,,,,,,,,XPAIM,,,,,,,,,}CPAL_,,,,,,,,,LE _{,,,,,,,,,,,,,,,,,,}^TE_,,,,,,,,,^YXPA_,,,,,,,,,^IMCPA_,,,,,,,,,^LLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Feb.1999