BCR3PM Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage ^V2
@
#
!
Gate trigger current ^V2
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
V5. High sensitivity (IGT≤10mA) is also available.
Limits
Unit
Min. Typ. Max.
—
—
2.0
mA
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
—
—
30 ^V5 mA
—
—
30 ^V5 mA
—
—
30 ^V5 mA
0.2
—
—
V
—
—
4.5
°C/ W
V3
—
—
V/µs
Voltage
class
VDRM
(V)
(dv/dt) c
Min.
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
12
600
1. Junction temperature
Tj=125°C
SUPPLY
VOLTAGE
TIME
5
V/µs
2. Rate of decay of on-state commutating current
(di/dt)c=–1.5A/ms
MAIN CURRENT
(di/dt)c
TIME
3. Peak off-state voltage
VD=400V
MAIN
VOLTAGE
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10²
7 TC = 25°C
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999