BCR20AM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
III QUADRANT
100
80
60
I QUADRANT
40
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
4
3
2
10²
7
5
4
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
10²
7 MINIMUM
5 _CHARAC-
III QUADRANT
3 TERISTICS
2 _VALUE
10¹
7
5
3
2
TYPICAL
EXAMPLE
10⁰ _{Tj = 125°C}
7
5
IT = 4A
3 ^{τ = 500µs}
2 ^{VD = 200V}
f = 3Hz
10^–1_{100 2 3 5 7 101}
I QUADRANT
2 3 5 7 10² 2 3
5 7 10³
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
330Ω
330Ω
V
V
TEST PROCEDURE
6Ω
TEST PROCEDURE
6V
A
330Ω
V
TEST PROCEDURE
Feb.1999