BCR20AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20AM
OUTLINE DRAWING
Dimensions in mm
10.5 MAX.

4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
2.5
φ 3.6 ± 0.2
1.0
0.8
2.5
E
0.5
2.6
q _{IT (RMS)} ................................................................ _20A
q VDRM ^{......................................................} _{400V / 600V}
q IFGT !, IRGT ! , IRGT # ^{...................} _{30mA (20mA)} ^V5
ŒŽ
V Measurement point of

case temperature
ΠT1 TERMINAL
 T2 TERMINAL
Ž ^{Ž GATE TERMINAL}
Œ
 T2 TERMINAL
TO-220
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage^V1
500
720
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave, Tc=105°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Ratings
Unit
20
A
200
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
167
A²s
Typical value
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
Feb.1999