BCR20AM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
10²
7
5
3
2 VGM = 10V
PG(AV) = 0.5W
10¹
7
5
3 VGT = 1.5V
2
PGM = 5W
IGM = 2A
10⁰
7
5
3
2
IFGT I , IRGT I , IRGT III
VGD = 0.2V
10^–1_{101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104}
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
50
360°
CONDUCTION
40 ^RESISTIVE,
INDUCTIVE
LOADS
30
20
10
0
0 4 8 12 16 20 24 28 32
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
3
IRGT I
2
10²
7
5
IFGT I
3
2
10¹
7
5
3
2
IRGT III
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10^–12 3 5 7 10⁰2 3 5 7 10¹2 3 5 710² 2 3 5 710³
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
80 ^360°
CONDUCTION
60 RESISTIVE,
INDUCTIVE
40 _LOADS
20 _{CURVES APPLY REGARDLESS}
OF CONDUCTION ANGLE
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
Feb.1999