BCR20AM Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
V TM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage^V2
@
#
!
Gate trigger current^V2
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=30A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω ^V3
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω ^V3
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1°C/W.
V5. High sensitivity (IGT ≤ 20mA) is also available. (IGT itme Œ)
Limits
Min. Typ. Max.
—
— 2.0
—
— 1.5
—
— 1.5
—
— 1.5
—
— 1.5
—
— 30 ^V5
—
— 30 ^V5
—
— 30 ^V5
0.2
—
—
—
— 0.8
V3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
8
12
VDRM
(V)
400
600
Symbol
R
(dv/dt)c
Min.
—
L
10
R
—
L
10
Test conditions
Unit
1. Junction temperature
Tj=125°C
2. Rate of decay of on-atate
V/µs
commutating current
(dv/dt)c=–10A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10³
7
5
3
2
10²
7
5
3
Tj = 125°C
2
10¹
7
5
Tj = 25°C
3
2
10⁰
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
ON-STATE VOLTAGE (V)
200
180
160
140
120
100
80
60
40
20
0
10⁰
RATED SURGE ON-STATE
CURRENT
2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999