FX30SMJ-3 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
TCh = 25°C
ID = –30A
–8
–6
VDS = –50V
–4
–80V
–100V
–2
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
VGS = 0V
Pulse Test
–40
TC = 125°C
75°C
–30
25°C
–20
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = –10V
7 _{ID = 1/2ID}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10¹
7
5
3
2
10^{0 D = 1.0}
7
5
0.5
3 _0.2
2
0.1
PDM
10^–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
tw
T
D= ^tw
T
10^–2_{10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
PULSE WIDTH tw (s)
Jan.1999