FX30SMJ-3 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –15A, VGS = –10V
ID = –15A, VGS = –4V
ID = –15A, VGS = –10V
ID = –15A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω
IS = –15A, VGS = 0V
Channel to case
IS = –30A, dis/dt = 100A/µs
Min.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–1.5
78
85
–1.17
41.3
11430
674
320
61
99
878
330
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
100
111
–1.50
—
—
—
—
—
—
—
—
–1.5
0.83
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–2
–10²
–7
–5
–3
–2
tw = 10µs
100µs
–10¹
–7
–5
–3
–2
1ms
10ms
–10⁰
DC
–7
–5 _{TC = 25°C}
–3 Single Pulse
–2
–2 –3 –5–7–10¹ –2 –3 –5–7–10² –2 –3 –5–7–10³ –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
–40 ^{VGS = –10V}
–6V
Pulse Test
–5V
–4V
–3.5V
–30
–3V
–20
PD = 150W
–10
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V
–6V
–4V
–16
–3V TC = 25°C
Pulse Test
–12
–8
–2.5V
–4
0
0
–2 –4 –6 –8 –10
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999