FX30SMJ-3 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
TC = 25°C
Pulse Test
–8
–6
–4
ID = –45A
–30A
–2
–15A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
VDS = –10V
Pulse Test
–40
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁵
7 ^{TCh = 25°C}
5 f = 1MHZ
3 ^{VGS = 0V}
2
10⁴
7
5
Ciss
3
2
10³
7
5
Coss
3
2
Crss
10²_{–100 –2 –3 –5 –7 –101 –2 –3 –5 –7–102}
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
160
120
VGS = –4V
80
–10V
40
0
–10⁰ –2 –3 –5 –7 –10¹ –2 –3 –5 –7 –10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
TC = 25°C
75°C
3
125°C
2
10¹
7
5
3
2
10⁰
–7
–10⁰
–2 –3
–5 –7 –10¹
VDS = –10V
Pulse Test
–2 –3 –5 –7
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10³
td(off)
7
5
3
tf
2
10²
tr
7
td(on)
5
TCh = 25°C
VDD = –80V
3
VGS = –10V
RGEN = RGS = 50Ω
2
–7
–10⁰
–2
–3
–5–7 –10¹ –2 –3
–5–7 –10² –2 –3
–5 –7
DRAIN CURRENT ID (A)
Jan.1999