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FX30SMJ-3 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FX30SMJ-3
MITSUBISHI Pch POWER MOSFET
FX30SMJ-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
Ï 3.2
Dimensions in mm
4.5
1.5
2
4.4
G
1.0
1 23
5.45
5.45
0.6
2.8
⢠4V DRIVE
⢠VDSS ............................................................. â150V
⢠rDS (ON) (MAX) .............................................. 100mâ¦
⢠ID .................................................................... â30A
⢠Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1
2 DRAIN
3 SOURCE
4 DRAIN
24
T0-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
â
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
â150
±20
â30
â120
â30
â30
â120
150
â55 ~ +150
â55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
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