CT60AM-18B Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – RESONANT INVERTER USE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18B
RESONANT INVERTER USE
THRESHOLD VOLTAGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
7.0
VCE = 400V
IC = 20mA
6.0
5.0
4.0
3.0
2.0
–50 0
50 100 150
JUNCTION TEMPERATURE tj (°C)
BREAKDOWN VOLTAGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
1.4
VGE = 0V
IC = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE tj (°C)
IGBT TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10^{010–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
7
5
3
2
2
10^–1
7
5
3
2
10^–2
10^–1
7
5
3
2
10^–2
5 710^–52 3 5 710^–42 3 5 710^–3
PULSE WIDTH tw (s)
DIODE TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10^{110–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101}
7
5
3
2
10⁰
7
5
5
3
3
2
2
10^–1
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–2
5 710^–52 3 5 710^–42 3 5 710^–3
PULSE WIDTH tw (s)
Feb.1999