CT60AM-18B Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – RESONANT INVERTER USE

CT60AM-18B
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18B
RESONANT INVERTER USE
OUTLINE DRAWING
20MAX.
Dimensions in mm
5
2
φ 3.2
4
¡VCES ............................................................................... 900V
¡IC ......................................................................................... 60A
¡Integrated Fast Recovery Diode
APPLICATION
Microwave ovens, electromagnetic cooking de-
vices, rice-cookers, voltage-resonant inverter circuit
electric appliances.
2
1
123
5.45 5.45
0.5
3
4.0
wr
q
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
e _TO-3PL
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
IC
ICM
IE
PC
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
VGE = 0V
VCE = 0V
VCE = 0V
TC = 25°C
Conditions
Ratings
900
±20
±30
60
120
40
200
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
A
A
W
°C
°C
Feb.1999