CT60AM-18B Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – RESONANT INVERTER USE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18B
COLLECTOR CURRENT VS.
GATE-EMITTER VOLTAGE
(TYPICAL)
200
VCE = 5V
Pulse Test
160
120
80
25°C
40
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
RESONANT INVERTER USE
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10⁴
7
Cies
5
3
2
10³
7
5
3
2
10²
7
5
3 ^{Tj = 25°C}
2 VGE = 0V
f = 1MHZ
10¹
3 5 7 10⁰ 2 3
5 7 10¹ 2 3
Coes
Cres
5 7 10² 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
3
td(off)
2
tf
tr
10²
7
5
td(on)
3
2
10¹₁₀₀
23
5 7 10¹
Tj = 25°C
VCC = 300V
VGE = 15V
RG = 10Ω
2 3 5 7 10²
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
IC = 60A
Tj = 25°C
16
12
VCE = 250V
400V
8
600V
4
0
0
80 160 240 320 400
GATE CHARGE Qg (nc)
SWITCHING TIME VS.GATE RESISTANCE
(TYPICAL)
3
Tj = 25°C
2 _{VCC = 300V}
VGE = 15V
10^{3 IC = 60A}
7
5
3
2
10²
7
5
310₀
tf
td(off)
tr
td(on)
2 3 5 7 10¹
23
5 7 10²
GATE RESISTANCE RG (Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
80
VGE = 0V
Pulse Test
64
48
32
TC = 25°C
16
0
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb.1999