CT60AM-18B Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – RESONANT INVERTER USE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18B
RESONANT INVERTER USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted)
Symbol
Parameter
Test conditions
V (BR) CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Etail
ICtail
VEC
Trr
Rth (j-c)
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Tail loss
Collector tail current
Emitter-collector voltage
Reverse recovery time
Thermal resistance (IGBT part)
Thermal resistance
IC = 1mA, VGE = 0V
VCE = 900V, VGE = 0V
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VCE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
IC = 60A, Resistance load,
VCC = 300V, VGE = 15V, RG = 10Ω
ICP = 60A, Tj = 125°C,
dv/dt = 200V/µs
IE = 60A, VGE = 0V
IE = 60A, di/dt = 20A/µs
Junction to case
Junction to case
Limits
Unit
Min.
Typ. Max.
900
—
—
V
—
—
1
mA
—
—
±0.5 µA
2.0
4.0
6.0
V
—
2.0
2.7
V
—
5000
—
pF
—
125
—
pF
—
85
—
pF
—
0.05
—
µs
—
0.12
—
µs
—
0.30
—
µs
—
0.25
—
µs
—
0.6
1.0 mJ/pls
—
6
12
A
—
—
3
V
—
0.5
2
µs
—
—
0.63 °C/W
—
—
4.0 °C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
200
TC = 25°C
PC = 200W
Pulse Test
160
120
15V _10V
9V
80
VGE = 20V
8V
40
7V
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VS.GATE-EMITTER VOLTAGE
(TYPICAL)
5
4
3
IC = 120A
2
1
TC = 25°C
Pulse Test
0
0
4
8
60A
30A
15A
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999