CM50DU-24F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10²
7
5
trr
3
Irr
2
10^{1 1}
7
5
3
2
10⁰
10⁰
23
5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.3Ω
Tj = 25°C
Inductive load
2 3 5 7 10²
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
18 IC = 50A
16
14
VCC = 400V
VCC = 600V
12
10
8
6
4
2
0
0
200
400
600
800
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–3
10¹
2
3
5 710^–22 3
5 710^–12 3
5 710⁰
23
5 7 10¹
7
5
3
2
IGBT part:
Per unit base = Rth(j–c) = 0.39K/ W
FWDi part:
Per unit base = Rth(j–c) = 0.70K/ W
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
Feb. 2009
4