CM50DU-24F Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts

CM50DU-24F
MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
¡IC ..................................................................... 50A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
7
17
Tc measured point
94
80 ±0.25
23
23
2–φ6.5
MOUNTING HOLES
C2E1
E2
C1
Dimensions in mm
4
3–M5NUTS
12mm deep
12
16 ^2.5 25 ^2.5 16
LABEL
13.5
TAB #110. t=0.5
C2E1
RTC
E2
C1
RTC
CIRCUIT DIAGRAM
Feb. 2009