CM50DU-24F Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts

MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
50
100
50
100
320
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
—
—
VGE(th) Gate-emitter threshold voltage IC = 5.0mA, VCE = 10V
5
6
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
VCE(sat) Collector-emitter saturation voltage IC = 50A, VGE = 15V
Tj = 25°C
—
Tj = 125°C —
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 600V, IC = 50A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 600V, IC = 50A
—
td(off)
Turn-off delay time
VGE = ±15V
—
tf
Turn-off fall time
RG = 6.3Ω, Inductive load
—
trr (Note 1) Reverse recovery time
IE = 50A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 50A, VGE = 0V
—
Rth(j-c)Q _{Thermal resistance*1}
IGBT part (1/2 module)
—
Rth(j-c)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, Thermal compound applied^*2 (1/2 module)
—
Rth(j-c’)Q Thermal resistance
Case temperature measured point is just under the chips —
RG
External gate resistance
6.3
—
1.8
1.9
—
—
—
550
—
—
—
—
—
2.1
—
—
—
0.07
—
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*^{1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
Max.
1
7
20
2.4
—
20
0.85
0.5
—
100
50
300
300
150
—
3.2
0.39
0.70
—
0.31^*3
63
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
Feb. 2009
2