CM50DU-24F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 50 Amperes/1200 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj=25°C
80
VGE=20V
15
11
10
9.5
9
60
40
8.5
20
8
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 100A
2
IC = 50A
IC = 20A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
Cies
10¹
7
5
3
2
10⁰
7
5
3
2 ^{VGE = 0V}
Cres
Coes
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
2
1.5
1
0.5
0
0
Tj = 25°C
Tj = 125°C
20 40 60 80 100
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
7 Tj = 25°C
5
3
2
10¹
7
5
3
2
10⁰_{0.5 1 1.5 2 2.5 3 3.5}
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
tf
3
2
td(off)
10²
7
5
3
2
Conditions:
10¹ _{VCC = 600V}
7
5
VGE = ±15V
3
2
RG = 6.3Ω
Tj = 125°C
Inductive load
10⁰_{100 2 3 5}
7 10¹
23
td(on)
tr
5 7 10²
COLLECTOR CURRENT IC (A)
Feb. 2009