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| CM350DU-5F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.17°C/W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.28°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-3
10-5
TIME, (s)
10-4
10-3
10-3
Sep.1998
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