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CM350DU-5F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Mounting Torque, M6 Main Terminal
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
CM350DU-5F
-40 to 150
-40 to 125
250
±20
350
700
350
700*
960
1.96 ~ 2.94
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N·m
Weight
–
520
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Grams
Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate Leakage Current
IGES
VGE = VCES, VCE = 0V
–
Gate-Emitter Threshold Voltage
VGE(th)
IC = 35mA, VCE = 10V
3.0
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 350A, VGE = 10V, Tj = 25°C
–
IC = 350A, VGE = 10V, Tj = 125°C
–
Total Gate Charge
QG
VCC = 100V, IC = 350A, VGE = 10V
–
Emitter-Collector Voltage*
VEC
IE = 350A, VGE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
–
VCE = 10V, VGE = 0V
–
–
VCC = 100V, IC = 350A,
–
VGE1 = VGE2 = 10V,
–
RG = 7.1Ω, Resistive
–
Load Switching Operation
–
IE = 350A, diE/dt = -700A/µs
–
IE = 350A, diE/dt = -700A/µs
–
Typ.
–
–
4.0
1.2
1.10
1320
–
Max.
1
0.5
5.0
1.7
–
–
2.0
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Typ. Max.
–
99
–
4.5
–
3.4
– 1100
– 2400
–
900
–
500
–
300
5.7
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
Thermal Resistance, Junction to Case
Rth(j-c)
Per Free-Wheel Diode
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.010
Max.
0.17
0.28
–
Units
°C/W
°C/W
°C/W
Sep.1998
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