CM350DU-5F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
700
V_GE = 15V
10
560
5.75
6
8
5.5
T_j = 25^oC
420
280
5.25
140
5.0
4.75
4.5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
I_C = 700A
3
I_C = 350A
2
1
I_C = 140A
0
0
10⁴
3
6
9
12 15
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
t_d(on)
t_f
10²
10¹
10¹
t_r
V_CC = 100V
V_GE = ±10V
R_G = 7.1 Ω
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
700
V_CE = 10V
T_j = 25°C
560
T_j = 125°C
420
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
V_GE = 10V
T_j = 25°C
1.6
T_j = 125°C
1.2
280
0.8
140
0.4
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
7
5 ^{Tj = 25°C}
3
2
10²
7
5
3
2
10¹
7
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
di/dt = -700A/µsec
T_j = 25°C
t_rr
10²
10²
I_rr
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10¹
10³
0
0 140 280 420 560 700
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 350A
16
V_CC = 50V
12
V_CC = 100V
8
4
0
0
0.7
1.4
2.1
2.8
GATE CHARGE, Q_G, (nC)
Sep.1998