CM350DU-5F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
T_C Measured
Point
E
K(4 - Mounting
Holes)
H
D
J
C
F ^CM
H
3 - M6 NUTS
R
R
G
MPMPM
L
TAB #110, t = 0.5
N
Q
C2E1
E2
Outline Drawing and Circuit Diagram
Dimensions Inches
A
4.33
B
3.66±0.01
C
3.15
D
2.44±0.01
E
0.55
F
0.86
G
0.94
H
0.24
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
14.0
21.75
24.0
6.0
G2
E2
C1
E1
G1
Dimensions Inches
J
0.59
K
0.26 Dia.
L 1.14 +0.04/-0.02
M
0.71
N
0.33
P
0.28
Q
0.83
R
0.98
Millimeters
15.0
6.5 Dia.
29 +1.0/-0.5
18.0
8.5
7.0
21.0
25.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having
a reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ UPS
ٗ Forklift
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (V_CES), 350 Ampere Trench
Gate Design Dual IGBT Module.
Type
CM
Current Rating
Amperes
350
V_CES
Volts (x 50)
5
Sep.1998