BCR3KM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
120
110 ^{CURVES APPLY}
REGARDLESS
100 _{OF CONDUCTION}
90 ^ANGLE
80
70
60 ^360°
CONDUCTION
50 _RESISTIVE,
40 ^INDUCTIVE
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140
ALUMINUM AND GREASED
120
120 120 t2.3
100 100 t2.3
100
60 60 t2.3
80
60
CURVES APPLY
40
REGARDLESS OF
CONDUCTION ANGLE
20
RESISTIVE,
INDUCTIVE LOADS
0
NATURAL CONVECTION
012345678
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7
TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
T_,,,,,,,,,2⁺, G_,,,,,,,,,⁺ _,,,,,,,,,^DTIYS_,,,,,,,,,PTIRC_,,,,,,,,,^IABLU_,,,,,,,,,^TI_,,,,,,,,,^ON_{,,,,,,,,,,,,,,,,,,}^TTE2YX+,P_,,,,,,,,,^AGIMC–_,,,,,,,,,^PALLE
T2^– , G^– EXAMPLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Feb.1999