BCR3KM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3KM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
E ^{1.1 ± 0.2}
0.75 ± 0.15 _{0.75 ± 0.15}
2.54 ± 0.25
ŒŽ
V Measurement point of
case temperature
q _{IT (RMS)} ^{..................................................................} _3A
q _VDRM ^{......................................................} _{400V / 600V}
q _{IFGT !, IRGT ! , IRGT #} ................... _{15mA (10mA)} ^V2
q _{UL Recognized : File No. E80271}
APPLICATION
Control of heater such as electric rice cooker, electric pot

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220FN
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
V DRM
Repetitive peak off-state voltage^V1
400
600
V
V DSM
Non-repetitive peak off-state voltage^V1
500
720
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Ratings
Unit
Commercial frequency, sine full wave 360° conduction, Tc=111°C
3
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
30
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
3.7
A²s
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
3
W
0.3
W
6
V
0.5
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Feb.1999