BCR3KM Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current Tj=125°C, VDRM applied
V TM
On-state voltage
Tc=25°C, ITM=4.5A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ^V3
Rth (j-a) Thermal resistance
Junction to ambient
V2. High sensitivity (IGT≤ 10mA) is also available. (IGT item Œ)
V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Unit
Min. Typ. Max.
—
— 2.0
mA
—
— 1.5
V
—
— 1.5
V
—
— 1.5
V
—
— 1.5
V
—
—
15^V2 mA
—
—
15^V2 mA
—
—
15^V2 mA
0.2
—
—
V
—
— 4.0 °C/ W
—
—
50 °C/ W
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10²
7 TC = 25°C
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999