BCR3KM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
10²
7
5
3
2
10¹
7
5
3 _VGT
2
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
10⁰
7
5
IRGT I
3
2
IFGM I , IRGM III
10^–1_{100 2 3 5 7 101 2 3}
VGD = 0.2V
5 7 10² 2 3 5 7 10³
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10²
7
5
4
3
2
10¹
7
5
4
3
2
10⁰_{102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105}
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
IRGT III
2
10²
7 IFGT I , IRGT I
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³ 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
5.0
4.5
4.0 _360°
3.5 ^CONDUCTION
RESISTIVE,
3.0 _INDUCTIVE
2.5 LOADS
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999