BCR30AM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ^{ALUMINUM AND GREASED}
NATURAL CONVECTION
120
160 160 t2.3
100
120 120 t2.3
100 100 t2.3
80
CURVES APPLY
60
REGARDLESS OF
CONDUCTION ANGLE
40
20
0
0
10
20
30
40
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7
TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
I QUADRANT
60
40
III QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
10²
7 MINIMUM
5 CHARAC-
4 _TERISTICS
3 _VALUE
2
TYPICAL
EXAMPLE
TC = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
10¹
7
5
4
3
I QUADRANT
2
III QUADRANT
10⁰
10¹ 2 3 4 5 7 10²
2 3 4 5 7 10³
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999