BCR30AM Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage ^V2
@
#
!
Gate trigger current ^V2
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=45A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ^V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (b-f) in case of greasing is 0.3°C/W.
Limits
Min. Typ. Max.
—
—
3.0
—
—
1.6
—
—
2.5
—
—
2.5
—
—
2.5
—
—
50
—
—
50
—
—
50
0.2
—
—
—
—
1.2
V3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R
—
L
20
R
—
12
600
L
20
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–16A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10³
7
TC = 25°C
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
500
400
300
200
100
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999