BCR30AM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
10²
7
5
3
2 VGM = 10V
10¹
7
5 VGT = 2.5V
3
2
PG(AV) =
0.5W
PGM = 5W
IGM = 2A
10⁰
7
5
3
2
IFGT I, IRGT I, IRGT III
VGD = 0.2V
10^–1
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
50
40
360°
CONDUCTION
30 ^RESISTIVE,
INDUCTIVE
LOADS
20
10
0
0
10 20 30 40 50
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
IRGT I, IRGT III
2
IFGT I
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10² 2 3 5 7 10³
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
40
RESISTIVE,
20 _INDUCTIVE
LOADS
0
0
10
20
30
40
RMS ON-STATE CURRENT (A)
Feb.1999