BCR30AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX
4
Dimensions
in mm
4.5±0.3
1.5±0.2
• IT (RMS) ...................................................................... 30A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 50mA
TYPE
NAME
∗
VOLTAGE
CLASS
2±0.3
1.0±0.2
123
5.45 5.45
0.6±0.2
2.8±0.3
∗ Measurement point of
case temperature
4
24
1 T1 TERMINAL
2 T2 TERMINAL
3 ^{3 GATE TERMINAL}
1
4 T2 TERMINAL
TO-3P
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=75°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
30
A
300
A
378
A²s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
4.8
g
Feb.1999