PSS30S71F6 Datasheet, PDF (2/12 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

< Dual-In-Line Package Intelligent Power Module >
PSS30S71F6
TRANSFER MOLDING TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
Applied between P-NU,NV,NW
Applied between P-NU,NV,NW
TC= 25°C
TC= 25°C, less than 1ms
TC= 25°C, per 1 chip
Ratings
Unit
450
V
500
V
600
V
30
A
60
A
90.9
W
-20~+150
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
VD
Control supply voltage
VDB
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
-0.5~VD+0.5
V
-0.5~VD+0.5
V
1
mA
-0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VCC(PROT)
TC
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2μs
Measurement point of Tc is provided in Fig.1
400
V
-20~+100
°C
Tstg
Storage temperature
Viso
Isolation voltage
-40~+125
°C
60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate
2500
Vrms
Fig. 1: TC MEASUREMENT POINT
Control terminals
17.7mm
18mm
IGBT chip position
FWDi chip position
Power terminals
Groove
Tc point
Heat sink side
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max.
Unit
Rth(j-c)Q
Rth(j-c)F
Junction to case thermal
resistance (Note 1)
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
-
-
1.1 K/W
-
-
2.8 K/W
Note 1: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : December 2013
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