APT50GN60BDQ2 Datasheet, PDF (9/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
+18V
0V
di_F/dt Adjust
Vr
APT40GT60BR
APT50GN60BD_SDQ2(G)
30μH
D.U.T.
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
trr/Qrr
Waveform
1 I_F - Forward Conduction Current
2 di_F/dt - Rate of Diode Current Change Through Zero Crossing.
3 I_RRM - Maximum Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
2
line through I_RRM and 0.25 I_RRM passes through zero.
5 Qrr - Area Under the Curve Defined by I_RRM and trr.
4
5
3
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector (Cathode)
Emitter (Anode)
D³PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99(.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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