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| APT50GN60BDQ2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – IGBT | |||
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TYPICAL PERFORMANCE CURVES
APT50GN60BDQ2 APTA5P0TG5N06G0BND6_0SSDDQ2Q(G2)
APT50GN60BDQ2(G) APT50GN60SDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefï¬cient. Low gate charge simpliï¬es gate drive
design and minimizes losses.
⢠600V Field Stop
⢠Trench Gate: Low VCE(on)
⢠Easy Paralleling
⢠6µs Short Circuit Capability
⢠175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
(B)
TO-247
G
C
E
D3PAK
(S)
C
G
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT50GN60BD_SDQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
107
64
150
150A @ 600V
366
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.05 1.45 1.85
1.7
50
TBD
600
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
µA
nA
Ω
Microsemi Website - http://www.microsemi.com
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