APT50GN60BDQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – IGBT

25
V_GE = 15V
20
15
10
5 ^V_CE ^{= 400V}
T_J = 25°C, 125°C
R_G = 4.3Ω
L = 100 µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
120
R_G = 4.3Ω, L = 100µH, V_CE = 400V
100
80
60
40
20
T_J = 25 or 125°C,V_GE = 15V
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
5000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
4000
T_J = 125°C
3000
2000
1000
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
16000
14000
V_CE = 400V
V_GE = +15V
T_J = 125°C
12000
E_on2,100A
10000
8000
E_off,100A
6000
4000
E_on2,50A
E_off,50A
2000
E_off,25A
0
E_on2,25A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT50GN60BD_SDQ2(G)
350
300
250
200 ^{VGE =15V,TJ=125°C}
150
V_GE =15V,T_J=25°C
100
50 ^VCE ^{= 400V}
R_G = 4.3Ω
L = 100 µH
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
R_G = 4.3Ω, L = 100µH, V_CE = 400V
140
120
T_J = 125°C, V_GE = 15V
100
80
T_J = 25°C, V_GE = 15V
60
40
20
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4000
3500
3000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
2500
2000
1500
1000
T_J = 25°C
500
0
10
30
50
70
90
110
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
E_on2,100A
4000
3000
E_off,100A
2000
E_off,50A
E_on2,50A
1000
E_off,25A
E_on2,25A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature