APT50GN60BDQ2 Datasheet, PDF (3/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
160
V_GE = 15V
140
120
T_J = 175°C
100
T_J = 125°C
80
T_J = 25°C
60
40
T_J = -55°C
20
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
160
140
250µs PULSE
TEST<0.5 % DUTY
CYCLE
T_J = -55°C
T_J = 25°C
120
T_J = 125°C
100
T_J = 175°C
80
60
40
20
00
2
4
6
8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
T_J = 25°C.
250µs PULSE TEST
3.0
<0.5 % DUTY CYCLE
I_C = 100A
2.5
2.0
I_C = 50A
1.5
I_C = 25A
1.0
0.5
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
200
15V
180
160
APT50GN60BD_SDQ2(G)
13V
140
12V
120
100
11V
80
10V
60
9V
40
8V
20
7V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 50A
14 ^{TJ = 25°C}
12
V_CE = 120V
V_CE = 300V
10
8
V_CE =480V
6
4
2
0
0
3.0
50 100 150 200 250 300 350 400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
I_C = 100A
2.0
I_C = 50A
1.5
1.0
I_C = 25A
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75
100 125 150 175
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
80
Lead Temperature
Limited
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature