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| APT200GT60JRDL Datasheet, PDF (7/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT | |||
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TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT200GT60JRDL
Unit
IF(AV)
IF(RMS)
Maximum Average Forward Current (TC = 50°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
100
116
Amps
640
Symbol Characteristic / Test Conditions
Min Type Max Unit
VF
Forward Voltage
DYNAMIC CHARACTERISTICS
IF = 100A
IF = 200A
IF = 50A, TJ = 125°C
1.25
1.6
2.0
Volts
1.25
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 1A, diF/dt = -100A/μs,
VR = 30V, TJ = 25°C
IF =100A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
IF = 100A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
IF = 100A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
-
56
-
ns
-
379
-
-
2202
-
nC
-
12
-
Amps
-
580
-
ns
-
5925
-
nC
-
19
-
Amps
-
264
-
ns
-
9530
-
nC
-
61
-
Amps
0.7
0.6
0.5
0.4
0.3
Note:
0.2
0.1
0
10-5
10-4
10-3
10-2
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
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