APT200GT60JRDL Datasheet, PDF (2/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

DYNAMIC CHARACTERISTICS
APT200GT60JRDL
Symbol
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (Diode) ⁵⁵
Turn-off Switching Energy ⁶⁶
Test Conditions
MIN TYP MAX
Capacitance
8650
V_GE = 0V, V_CE = 25V
f = 1 MHz
546
1180
Gate Charge
7.5
V_GE = 15V
946
V_CE = 300V
58
I_C = 200A
430
T_J = 150°C, R_G = 4.3Ω, V_GE =
15V, L = 100μH,V_CE = 600V ⁶⁰⁰
Inductive Switching (25°C)
72
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 2.2Ω
T_J = +25°C
160
952
212
9193
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 2.2Ω
T_J = +125°C
19290
71
157
1030
202
10460
20210
UNIT
pF
V
nC
A
ns
μJ
ns
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R_θJC
R_θJC
W_T
V_Isolation
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MIN TYP
29.2
2500
MAX
.21
.61
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on
switching loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.